US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Graphene liners and caps for semiconductor structures" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,144, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Graphene liners and caps for semiconductor structures" was invented by Shu-Cheng Chin (Hsinchu, Taiwan), Chih-Yi Chang (New Taipei, Taiwan), Chih-Chien Chi (Hsinchu, Taiwan) and Ming-Hsing Tsai (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A graphene liner deposited between at least one liner material (e.g., barrier layer, ruthenium liner, and/or cobalt liner) and a copper conductive structure reduces surface scattering at an interface between the at least one liner material and the copper conductive structure. Additionally, or...