US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 18 for "Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,105, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the same" was invented by Pei-Hsun Wu (Hsinchu, Taiwan), Ming-Hung Han (Hsinchu, Taiwan), Po-Nien Chen (Miaoli County, Taiwan) and Chih-Yung Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a first region and a second region, a first transistor in the first region, a second transistor in the first region, and a third transistor in the second region. The first transistor in...