US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Gallium nitride drain structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,232, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gallium nitride drain structures and methods of forming the same" was invented by Chi-Ming Chen (Zhubei, Taiwan), Kuei-Ming Chen (New Taipei, Taiwan) and Yung-Chang Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed. As a result, gaps and other defects caused by lattice mismatch...