ALEXANDRIA, Va., March 19 -- United States Patent no. 12,253,796, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Extreme ultraviolet mask and method for forming the same" was invented by Yun-Yue Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material."

The patent was filed on Dec. 19, 2023, under Application No. 18/545,948.

*Fo...