US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 18 for "EUV metallic resist performance enhancement via additives" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,253,800, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"EUV metallic resist performance enhancement via additives" was invented by An-Ren Zi (Hsinchu, Taiwan), Joy Cheng (Taoyuan, Taiwan) and Ching-Yu Chang (Yilang County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsiu...