ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,201, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"ESD structure" was invented by Chun-Chia Hsu (Kaohsiung, Taiwan), Tung-Heng Hsieh (Hsinchu County, Taiwan), Yung-Feng Chang (Hsinchu, Taiwan), Bao-Ru Young (Zhubei, Taiwan), Jam-Wem Lee (Hsinchu, Taiwan) and Chih-Hung Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity ov...