US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,647, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer" was invented by Jun-Yao Chen (Hsinchu, Taiwan), Harry-Hak-Lay Chuang (Hsinchu, Taiwan) and Hung Cho Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top e...