US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 18 for "Compact static random-access memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,528, issued on March 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Compact static random-access memory structure" was invented by Ruey-Wen Chang (Hsinchu, Taiwan), Feng-Ming Chang (Hsinchu County, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random-access memory (SRAM) structure and the manufacturing method thereof are disclosed. An exemplary SRAM structure includes a first source/drain (S/D) feature and a second S/D feature formed in an interlayer dielectric layer (ILD) of a bit cell region of the SRAM structure, a frontside via electrically connecting...