US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Chemical vapor deposition for uniform tungsten growth" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,783, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Chemical vapor deposition for uniform tungsten growth" was invented by Pin-Wen Chen (Keelung, Taiwan), Yuan-Chen Hsu (Hsinchu, Taiwan) and Ken-Yu Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Low-flow tungsten chemical vapor deposition (CVD) techniques described herein provide substantially uniform deposition of tungsten on a semiconductor substrate. In some implementations, a flow of a processing vapor is provided to a CVD processing chamber such that a flow rate of tungsten hexafluoride in the processing vapor results i...