US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Cell structure with intermediate metal layers for power supplies" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,142, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Cell structure with intermediate metal layers for power supplies" was invented by Li-Chun Tien (Tainan, Taiwan), Chih-Liang Chen (Hsinchu, Taiwan), Hui-Zhong Zhuang (Kaohsiung, Taiwan), Shun Li Chen (Hsinchu, Taiwan) and Ting Yu Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cell on an integrated circuit is provided. The cell includes: a fin structure; an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structur...