US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Capacitor between two passivation layers with different etching rates" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,131, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Capacitor between two passivation layers with different etching rates" was invented by Chia-Ming Huang (Tainan, Taiwan), Ming-Da Cheng (Taoyuan, Taiwan), Songbor Lee (Zhubei, Taiwan), Jung-You Chen (Zhubei, Taiwan), Ching-Hua Kuan (Kaohsiung, Taiwan) and Tzy-Kuang Lee (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a first passivation layer over a conductive feature, wherein the first passivation layer has a first dielectric constant, forming a capacitor over the first passivation layer, and depositi...