US Patent Issued to Taiwan Semiconductor Manufacturing on March 18 for "Analog non-volatile memory device using poly ferrorelectric film with random polarization directions" (Taiwanese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,552, issued on March 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Analog non-volatile memory device using poly ferrorelectric film with random polarization directions" was invented by Chih-Sheng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a ferroelectric field-effect transistor (FeFET), wherein the FeFET includes a substrate; a source region in the substrate; a drain region in the substrate; and a gate structure over the substrate and between the source region and the drain region. The gate structure includes a gate dielectric layer over the substrate; ...