ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,656, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Transistor, integrated circuit, and manufacturing method of transistor" was invented by Marcus Johannes Henricus Van Dal (Linden, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a first gate structure, a channel layer, and source/drain contacts. The first gate structure includes metallic nanosheets. Each of the metallic nanosheets includes a top surface, a bottom surface opposite to the top surface, and sidewalls connecting the top surface and the bottom surface. The channel layer surrounds the top surfaces, the bott...