US Patent Issued to Taiwan Semiconductor Manufacturing on March 11 for "Semiconductor structure with dielectric fin feature" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,621, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure with dielectric fin feature" was invented by Guan-Lin Chen (Baoshan Township, Hsinchu County, Taiwan), Jung-Chien Cheng (Tainan, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Shi-Ning Ju (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first channel structures and second channel structures formed over the substrate. The ...