US Patent Issued to Taiwan Semiconductor Manufacturing on March 11 for "Semiconductor device structure with an interconnect structure in a dielectric layer with multiple hydrophobic layers along sidewalls of the dielectric layer, and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,542, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure with an interconnect structure in a dielectric layer with multiple hydrophobic layers along sidewalls of the dielectric layer, and method for forming the same" was invented by Chun-Hao Kung (Hsinchu, Taiwan), Chih-Chieh Chang (Zhubei, Taiwan), Kao-Feng Liao (Hsinchu, Taiwan), Hui-Chi Huang (Zhubei, Taiwan) and Kei-Wei Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate,...