US Patent Issued to Taiwan Semiconductor Manufacturing on March 11 for "Semiconductor device including multiple inner spacers with different etch rates and method of making" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,639, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including multiple inner spacers with different etch rates and method of making" was invented by Wen-Kai Lin (Hsinchu, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan) and Yung-Cheng Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Improved inner spacers for semiconductor devices and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a substrate; a plurality of semiconductor channel structures over the substrate; a gate structure over the semi...