US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 11 for "Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation" (California Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,450, issued on March 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation" was invented by Luc Thomas (San Jose, Calif.), Guenole Jan (San Jose, Calif.) and Ru-Ying Tong (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML w...