ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,507, issued on March 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device" was invented by An-Ren Zi (Hsinchu, Taiwan), Ching-Yu Chang (Yuansun Village, Taiwan) and Chin-Hsiang Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-con...