US Patent Issued to Taiwan Semiconductor Manufacturing on March 11 for "Method and structure for improved memory integrity at array boundaries" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,250,888, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method and structure for improved memory integrity at array boundaries" was invented by Jun-Yao Chen (Taoyuan, Taiwan), Hung Cho Wang (Taipei, Taiwan) and Harry-Hak-Lay Chuang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relate to semiconductor structure that includes a substrate and a memory array. The memory array is spaced over the substrate and has a plurality of rows and a plurality of columns. Further, the memory array comprises a first memory cell and a second memory cell that are adjacent at a com...