ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,568, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Metallization structure" was invented by Chia-Kuei Hsu (Hsinchu, Taiwan), Ming-Chih Yew (Hsinchu, Taiwan), Shu-Shen Yeh (Taoyuan, Taiwan), Po-Yao Lin (Hsinchu County, Taiwan) and Shin-Puu Jeng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A metallization structure electrically connected to a conductive bump is provided. The metallization structure includes an oblong-shaped or elliptical-shaped redistribution pad, a conductive via disposed on the oblong-shaped or elliptical-shaped redistribution pad, and an under bump metallurgy...