ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,390, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory systems with vertical integration" was invented by Chieh Lee (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan), Jen-Yuan Chang (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first layer, wherein the first layer includes a first memory array, a first row decoder circuit, and a first column sensing circuit. The memory device includes a second layer disposed with respect to the first layer in a vertical direction. The second l...