US Patent Issued to Taiwan Semiconductor Manufacturing on March 11 for "FinFET device and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,650, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FinFET device and methods of forming the same" was invented by Shahaji B. More (Hsinchu, Taiwan), Cheng-Han Lee (New Taipei, Taiwan) and Shih-Chieh Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; a fin protruding above the substrate, the fin including a compound semiconductor material that includes a semiconductor material and a first dopant, the first dopant having a different lattice constant than the semiconductor material, where a concentration of the first dopant in the fin c...