US Patent Issued to Taiwan Semiconductor Manufacturing on March 11 for "3DIC with gap-fill structures and the method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,566, issued on March 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"3DIC with gap-fill structures and the method of manufacturing the same" was invented by Ping-Jung Wu (Hsinchu, Taiwan), Ken-Yu Chang (Hsinchu, Taiwan), Hao-Wen Ko (Hsinchu, Taiwan) and Tsang-Jiuh Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes bonding a top die to a bottom die, depositing a first dielectric liner on the top die, and depositing a gap-fill layer on the first dielectric liner. The gap-fill layer has a first thermal conductivity value higher than a second thermal conductivity value of silicon oxi...