US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Transistor gate structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,191, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate structures and methods of forming the same" was invented by Shih-Yao Lin (New Taipei, Taiwan), Chen-Ping Chen (Toucheng Township, Taiwan), Hsiaowen Lee (Hsinchu, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: an isolation region; nanostructures protruding above a top surface of the isolation region; a gate structure wrapped around the nanostructures, the gate structure having a bottom surface contacting the isolation region, the bottom surface of the gate ...