US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Stacked multi-gate structure and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,192, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Stacked multi-gate structure and methods of fabricating the same" was invented by Cheng-Ting Chung (Hsinchu, Taiwan), Hou-Yu Chen (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a stack of first channel layers, first and second source/drain (S/D) epitaxial features adjacent to opposite sides of at least a portion of the first channel layers, respectively, a stack of second channel layers stacked over the first channel layer...