US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "SOT-MRAM with shared selector" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,428, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"SOT-MRAM with shared selector" was invented by MingYuan Song (Hsinchu, Taiwan), Shy-Jay Lin (Jhudong Township, Taiwan), Chien-Min Lee (Hsinchu, Taiwan) and William Joseph Gallagher (Ardsley, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector laye...