ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,360, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure and method of forming the same" was invented by Georgios Vellianitis (Heverlee, Belgium), Gerben Doornbos (Kessel-Lo, Belgium), Marcus Johannes Henricus Van Dal (Linden, Belgium) and Mauricio Manfrini (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a storage element layer and a selector. The selector is electrically coupled to the storage element layer, and includes a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer ...