ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,647, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices and methods" was invented by Yu-Kai Lin (Changhua County, Taiwan), Po-Cheng Shih (Hsinchu, Taiwan), Jr-Hung Li (Chupei, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of manufacture are presented herein in which a etch stop layer is selectively deposited over a conductive contact. A dielectric layer is formed over the etch stop layer and an opening is formed through the dielectric layer and the etch stop layer to expose the conductive contact. Conducti...