US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Semiconductor device structure with metal gate stack" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,215, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with metal gate stack" was invented by Jia-Chuan You (Taoyuan County, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The semiconductor device structure also includes a first gate stack over the first channel structure and a second gate stack over the second c...