ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,680, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).
"Semiconductor device having backside interconnect structure on through substrate via" was invented by Yung-Chi Lin (Su-Lin, Taiwan), Hsin-Yu Chen (Taipei, Taiwan), Ming-Tsu Chung (Hsinchu, Taiwan), Hsiaoyun Lo (Hsinchu, Taiwan), Hong-Ye Shih (New Taipei, Taiwan), Chia-Yin Chen (Hsinchu, Taiwan), Ku-Feng Yang (Baoshan Township, Taiwan), Tsang-Jiuh Wu (Hsinchu, Taiwan) and Wen-Chih Chiou (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a through-substrate via extending from a frontside to a backside of a...