US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,235, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Yu-San Chien (Hsinchu, Taiwan), Chun-Sheng Liang (Changhua County, Taiwan), Jhon-Jhy Liaw (Hsinchu County, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Hsin-Che Chiang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a substrate, one hybrid fin, a gate, and a dielectric structure. The substrate includes at least two fins. The hybrid fin is disposed between the at least two fins. The gate covers portions of the at least two fi...