US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Semiconductor device and method" (Taiwanese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,196, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Po-Hsun Ho (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first source/drain region including: a first metal layer including a first metal; and a conductive two-dimensional material on the first metal layer; an isolation layer physically contacting a sidewall of the first metal layer, wherein the conductive two-dimensional material protrudes above the isolation layer; a two-dimensional semiconductor material on the isolation layer, wherein a sidewall of the two-d...