US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Semiconductor device and formation method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,221, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and formation method thereof" was invented by Te-Chih Hsiung (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device is provided. The method includes forming first and second semiconductor fins over a semiconductor substrate; depositing a first isolation dielectric layer over the first and second semiconductor fins, the first isolation dielectric layer having a trench between the first and second semiconductor fins; depositing a second isolation dielectric layer having a fir...