US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Resistive random access memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,441, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Resistive random access memory device" was invented by Yu-Der Chih (Hsin-Chu, Taiwan), Chung-Cheng Chou (Hsin-Chu, Taiwan) and Wen-Ting Chu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory architecture includes: a plurality of cell arrays each of which comprises a plurality of bit cells, wherein each of bit cells of the plurality of cell arrays uses a respective variable resistance dielectric layer to transition between first and second logic states; and a control logic circuit, coupled to the plurality of cell arrays, ...