US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Photonic device and method having increased quantum effect length" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,255, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Photonic device and method having increased quantum effect length" was invented by Tsai-Hao Hung (Hsinchu, Taiwan), Tao-Cheng Liu (Hsinchu, Taiwan) and Ying-Hsun Chen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and t...