US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Passivation layers with rounded corners" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,646, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Passivation layers with rounded corners" was invented by Mingni Chang (Hsinchu, Taiwan) and Hsuan-Ming Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a structure with passivation layers with rounded corners and a method for forming such a structure. The method includes forming a first insulating layer on a substrate, where the substrate includes a first conductive structure. The method further includes forming an opening in the first insulating layer to expose the first conductive structure and...