US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Methods of writing and forming memory device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,165, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of writing and forming memory device" was invented by Chien-Min Lee (Hsinchu County, Taiwan), Ming-Yuan Song (Hsinchu, Taiwan), Yen-Lin Huang (Menlo Park, Calif.), Shy-Jay Lin (Hsinchu County, Taiwan), Tung-Ying Lee (Hsinchu, Taiwan) and Xinyu Bao (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector...