ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,728, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method of manufacturing die stack structure" was invented by Ching-Jung Yang (Taoyuan, Taiwan) and Hsien-Wei Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a die stack structure includes the following steps. A first bonding structure is formed over a front side of a first die. The method of forming the first bonding structure includes the following steps. A first bonding dielectric material is formed on a first test pad of the first die. A first blocking layer is formed over the first bonding dielectri...