US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Method of fabricating Fin-type field-effect transistor device having substrate with heavy doped and light doped regions" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,224, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of fabricating Fin-type field-effect transistor device having substrate with heavy doped and light doped regions" was invented by Chun-Hung Chen (Hsinchu, Taiwan), Chih-Hung Hsieh (Hsin-Chu, Taiwan) and Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin-type field-effect transistor device includes a substrate, insulators, gate stacks and dielectric strips. The substrate includes a first doped region, a second doped region, third doped blocks located above the first doped region and fourth doped blocks l...