US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Method for manufacturing semiconductor device including annealing treatment of inner spacer layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,208, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for manufacturing semiconductor device including annealing treatment of inner spacer layer" was invented by Yoh-Rong Liu (Taipei, Taiwan), Wen-Kai Lin (Yilan County, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan), Yung-Cheng Lu (Hsinchu, Taiwan), Li-Chi Yu (Jhubei, Taiwan) and Sen-Hong Syue (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of...