US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Method and multi-channel devices with anti-punch-through features" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,190, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method and multi-channel devices with anti-punch-through features" was invented by Min Jiao (Hsinchu, Taiwan), Ji-Yin Tsai (Hsinchu County, Taiwan), Da-Wen Lin (Hsinchu, Taiwan) and Hung-Ju Chou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provide a method that includes receiving a substrate having a semiconductor surface of a first semiconductor material; forming an APT feature in the substrate; performing a prebaking process to the substrate with a first temperature T1; epitaxially growing an undoped s...