US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Metal gates for multi-gate devices and fabrication methods thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,216, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal gates for multi-gate devices and fabrication methods thereof" was invented by Jo-Chun Hung (Hsinchu, Taiwan), Chih-Wei Lee (Hsinchu, Taiwan), Wen-Hung Huang (Hsinchu, Taiwan) and Kuo-Feng Yu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An n-type field effect transistor includes semiconductor channel members vertically stacked over a substrate, a gate dielectric layer wrapping around each of the semiconductor channel members, and a work function layer disposed over the gate dielectric layer. The work function layer...