US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Metal fuse structure by via landing" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,149, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal fuse structure by via landing" was invented by Hsiang-Wei Liu (Tainan, Taiwan), Yao-Jen Yang (Hsinchu County, Taiwan) and Meng-Sheng Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect of the present disclosure, a semiconductor device is disclosed. In some embodiments, the semiconductor device includes a first conductive structure extending in a first direction, the first conductive structure coupled to a metal-oxide-semiconductor (MOS) device; a second conductive structure extending in the first dire...