US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Memory device, read clock generation circuit, and method for controlling read operation in memory device" (Canadian Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,474, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device, read clock generation circuit, and method for controlling read operation in memory device" was invented by Sanjeev Kumar Jain (Kanata, Canada) and Atul Katoch (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device, which includes a memory array, a read-clock generation circuit, and a local input/output circuit. The read-clock generation circuit receives a sense amplifier enable signal, a first sense amplifier pre-charge signal, and a latched write enable signal to generate a ...