ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,232, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsin-Chu, Taiwan).
"Liner structures" was invented by Tsung-Chieh Hsiao (Changhua, Taiwan), Johnson Chen (Hsinchu, Taiwan), Tzung-Yi Tsai (Hsinchu, Taiwan), Tsung-Lin Lee (Hsinchu, Taiwan) and Yen-Ming Chen (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin structure over a substrate. The fin structure includes a bottom portion and a top portion. The bottom and the top portions have different materials. The device also includes a liner layer on a sidewall of the bottom portion, a dielectric layer on side surfaces of ...