US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Latch circuit formed by modified memory cells" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,438, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Latch circuit formed by modified memory cells" was invented by Hua-Hsin Yu (Hsinchu, Taiwan), Cheng Hung Lee (Hsinchu, Taiwan), Hung-Jen Liao (Hsinchu, Taiwan) and Hau-Tai Shieh (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A latch formed from a memory cell includes a clock input terminal configured to receive a clock signal, complementary first and second data terminals, and a latch circuit. The latch circuit has first and second inverters. The first inverter has an input terminal coupled to the first data terminal, and the secon...