ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,648, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Interlayer dielectric layer" was invented by Joung-Wei Liou (Hsinchu, Taiwan), Yi-Wei Chiu (Kaohsiung, Taiwan) and Bo-Jhih Shen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method for forming a silicon-based, carbon-rich, low-k ILD layer with a carbon concentration between about 15 atomic % and about 20 atomic %. For example, the method includes depositing a dielectric layer, over a substrate, with a dielectric material having a dielectric constant below 3.9 and a carbon atomic concentration betw...