US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Integrated circuit fin structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,321,680, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit fin structure" was invented by Po-Hsiang Huang (Hsinchu, Taiwan), Fong-Yuan Chang (Hsinchu, Taiwan), Clement Hsingjen Wann (Hsinchu, Taiwan), Chih-Hsin Ko (Hsinchu, Taiwan), Sheng-Hsiung Chen (Hsinchu, Taiwan), Li-Chun Tien (Hsinchu, Taiwan) and Chia-Ming Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are o...