US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 3 for "Integrated circuit device with source/drain barrier" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,201, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Integrated circuit device with source/drain barrier" was invented by Feng-Ching Chu (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Yen-Ming Chen (Hsin-Chu County, Taiwan) and Feng-Cheng Yang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various examples of an integrated circuit device and a method for forming the device are disclosed herein. In an example, a method includes receiving a workpiece that includes a substrate, and a device fin extending above the substrate. The device fin includes a channel region. A portion o...