US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Image sensor with improved quantum efficiency surface structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,258, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Image sensor with improved quantum efficiency surface structure" was invented by Yun-Wei Cheng (Taipei, Taiwan), Chun-Hao Chou (Tainan, Taiwan), Kuo-Cheng Lee (Tainan, Taiwan), Hsun-Ying Huang (Tainan, Taiwan) and Shih-Hsun Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure ...